IXBH9N160G

Trans IGBT Chip N-CH 1600V 9A 100000mW 3Pin3+Tab TO-247AD

IGBT - 1600 V 9 A 100 W 通孔 TO-247AD（IXBH）

得捷:
IGBT 1600V 9A 100W TO247AD

立创商城:
IXBH9N160G

艾睿:
This IXBH9N160G IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1600 V. Its maximum power dissipation is 100000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

TME:
Transistor: IGBT; 1.6kV; 9A; 100W; TO247AD

Verical:
Trans IGBT Chip N-CH 1600V 9A 100000mW 3-Pin3+Tab TO-247AD

Win Source:
IGBT 1600V 9A 100W TO247AD

DeviceMart:
IGBT 1600V 9A 100W TO247AD