IXBH42N170

IXBH 系列 单通道 1700 V 42 A 37 ns ton 双极性 MOS 晶体管 - TO-247

IGBT - 1700 V 80 A 360 W 通孔 TO-247AD

得捷:
IGBT 1700V 80A 360W TO247

艾睿:
This fast-switching IXBH42N170 IGBT transistor from Ixys Corporation will be perfect in your circuit. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 360000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Chip1Stop:
Trans IGBT Chip N-CH 1700V 80A 360000mW 3-Pin3+Tab TO-247AD

Verical:
Trans IGBT Chip N-CH 1700V 80A 360000mW 3-Pin3+Tab TO-247AD