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IR2102SPBF

600V,高低边驱动器

VOFFSET 600V max.

IO+/- 130 mA / 270 mA

VOUT 10 - 20V

ton/off typ. 160 & 150 ns

Delay Matching 50 ns

Description

The IR2101S/IR2102S are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

• Floating channel designed for bootstrap operation

  Fully operational to +600V

  Tolerant to negative transient voltage

  dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout

• 3.3V, 5V, and 15V logic input compatible

• Matched propagation delay for both channels

• Outputs in phase with inputs IR2101 or out of phase with inputs IR2102

• Also available LEAD-FREE

IR2102SPBF PDF数据文档
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