IR2153PBF

MOSFET 和 IGBT 栅极驱动器，半桥，Infineon Infineon 系列高电压端和低电压端半桥 MOSFET 和 IGBT 栅极驱动器 IC 栅极驱动电源范围从 6 V 到 20 V CMOS 施密特触发器输入 两个独立的栅极驱动器 匹配的传播延迟，用于两个通道 输出相位，带输入 无铅，符合 RoHS MOSFET 和 IGBT 驱动器，Infineon International Rectifier

The IR2153DS are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1 V. Finally, special attention has been paid to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

**Features:**

* Floating Channel Designed for Bootstrap Operation

* Fully Operational to +600 V

* Cross-Conduction Prevention Logic

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High Side Output in Phase with HIN Input