FDD13AN06A0

FAIRCHILD SEMICONDUCTOR  FDD13AN06A0  晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0115 ohm, 10 V, 4 V

The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is suitable for use in synchronous rectification and battery protection circuit application.

.

Low miller charge

.

Low Qrr body diode

.

UIS Capability single pulse and repetitive pulse