FQT7N10LTF

FAIRCHILD SEMICONDUCTOR  FQT7N10LTF  晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V

The is a N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

.

100% Avalanche tested

.

5.8nC Typical low gate charge

.

10pF Typical low Crss