BFG10

BFG10 NPN三极管 20V 250mA/0.25A 25 SOT-143 marking/标记 N7 高功率增益

NPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.