BFG193

BFG193 NPN三极管 20V 80mA 6GHz~8GHz 70~140 SOT-223 marking/标记 BFG193 低噪声，高增益放大器

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 12V 集电极连续输出电流ICCollector CurrentIC| 80mA 截止频率fTTranstion FrequencyfT| 6GHz~8GHz 直流电流增益hFEDC Current GainhFE| 70~140 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 600mW/0.6W Description & Applications| NPN Silicon RF Transistor

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• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description 描述与应用| NPN硅RF晶体管* •低噪声，高增益放大器高达2 GHz •对于线性宽带放大器 •英尺= 8 GHz时，F = 1分贝在900 MHz •无铅（符合RoHS）包1） •符合AEC Q101 *短期描述