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IXGH16N170A

1700 V,32 A 甚高压 NPT IGBT, TO-247

IGBT NPT 1700 V 16 A 190 W 通孔 TO-247AD


得捷:
IGBT 1700V 16A 190W TO247


艾睿:
This powerful and secure IXGH16N170A IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 190000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.


IXGH16N170A PDF数据文档
图片 型号 厂商 下载
IXGH16N170A IXYS Semiconductor
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IXGH24N60B IXYS Semiconductor
IXGH30N60BD1 IXYS Semiconductor
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IXGH32N60C IXYS Semiconductor
IXGH32N60CD1 IXYS Semiconductor
IXGH50N60B IXYS Semiconductor
IXGH32N60B IXYS Semiconductor
IXGH24N60A IXYS Semiconductor
IXGH32N60BU1 IXYS Semiconductor