CIG21C2R2MNE
0805 2.2uH ±20%
2.2µH Shielded Multilayer Inductor 800mA 250mOhm
得捷:
FIXED IND 2.2UH 800MA 250MOHM SM
艾睿:
Inductor Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 770mA 250mOhm DCR 0805 T/R
0805 2.2uH ±20%
2.2µH Shielded Multilayer Inductor 800mA 250mOhm
得捷:
FIXED IND 2.2UH 800MA 250MOHM SM
艾睿:
Inductor Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 770mA 250mOhm DCR 0805 T/R
图片 | 型号 | 厂商 | 下载 |
---|---|---|---|
![]() | CIG21C2R2MNE | Samsung 三星 | |
![]() | CIG21L1R2MNE | Samsung 三星 | |
![]() | CIG21L4R7MNE | Samsung 三星 | |
![]() | CIG22B2R2MLE | Samsung 三星 | |
![]() | CIG22H1R0MAE | Samsung 三星 | |
![]() | CIG21F1R0MNC | Samsung 三星 | |
![]() | CIG21F1R5MNC | Samsung 三星 | |
![]() | CIG22H1R2MNE | Samsung 三星 | |
![]() | CIG22LR47MNE | Samsung 三星 | |
![]() | CIG21C4R7MNE | Samsung 三星 | |
![]() | CIG21L1R5MNE | Samsung 三星 |