PSMN130-200D,118

NXP  PSMN130-200D,118  晶体管, MOSFET, N沟道, 25 A, 200 V, 0.12 ohm, 10 V, 3 V

The is a SiliconMAX standard level N-channel enhancement-mode FET in a plastic package using TrenchMOS® technology. It is designed and qualified for use in DC-to-DC converters and switched-mode power supply applications.

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Higher operating power due to low thermal resistance

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Suitable for high frequency applications due to fast switching characteristics

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Low conduction losses due to low ON-state resistance

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-55 to 175°C Junction temperature range