BLV20
射频RF双极晶体管 RF Transistor
DESCRIPTION:
The ASI is Designed for Class C, 28 V High Band Applications up to 175 MHz.
FEATURES:
• Common Emitter
• PG = 12 dB at 8.0 W/175 MHz
• Omnigold™ Metalization System
贸泽:
射频RF双极晶体管 RF Transistor
射频RF双极晶体管 RF Transistor
DESCRIPTION:
The ASI is Designed for Class C, 28 V High Band Applications up to 175 MHz.
FEATURES:
• Common Emitter
• PG = 12 dB at 8.0 W/175 MHz
• Omnigold™ Metalization System
贸泽:
射频RF双极晶体管 RF Transistor
图片 | 型号 | 厂商 | 下载 |
---|---|---|---|
![]() | BLV20 | Advanced Semiconductor |