ZXTN25100BFHTA

ZXTN25100BFH 系列 100 V 3 A 表面贴装 中等功率 晶体管 - SOT-23-3

Add switching and amplifying capabilities to your electronic circuit with this NPN GP BJT from Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1810 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.