ZXT13P12DE6

DIODES INC.  ZXT13P12DE6  单晶体管 双极, PNP, 12 V, 55 MHz, 1.1 W, 4 A, 500 hFE

The is a SuperSOT4™ PNP silicon low saturation switching Bipolar Transistor. It is 4th generation ultra-low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.

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Extremely low equivalent ON-resistance

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Extremely low saturation voltage

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hFE characterised up to 15A

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-55 to 150°C Operating temperature range