锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

APT80GA60LD40

高速PT IGBT High Speed PT IGBT

This powerful and secure IGBT transistor from will make sure your circuit works properly. Its maximum power dissipation is 625000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

APT80GA60LD40 PDF数据文档
图片 型号 厂商 下载
APT80GA60LD40 Microsemi 美高森美
APT8DQ60KG Microsemi 美高森美
APT8M80K Microsemi 美高森美
APT8M100B Microsemi 美高森美
APT80GA60B Microsemi 美高森美
APT80GA90B Microsemi 美高森美
APT80GA90LD40 Microsemi 美高森美
APT8052BFLLG Microsemi 美高森美
APT8065BVRG Microsemi 美高森美
APT85GR120L Microsemi 美高森美
APT85GR120B2 Microsemi 美高森美