2SJ668

2SJ668 P沟道MOS场效应管Vds= -60V Id=-5A Rds=0.16~0.25ohm SOT-252 marking/标记 J668

Relay Drive, DC/DC Converter and Motor Drive

Applications

• 4 V gate drive

• Low drain-source ON-resistance: RDS ON = 0.12 Ω typ.

• High forward transfer admittance: |Yfs| = 5.0 S typ.

• Low leakage current: IDSS = −100 μA max VDS = −60 V

• Enhancement mode: Vth = −0.8 to −2.0 V VDS = −10 V, ID = −1 mA

TME:
Transistor: P-MOSFET; unipolar; -60V; -5A; 20W; DPAK

Win Source:
MOSFET P-CH 60V 5A PW-MOLD

2SJ668 PDF数据文档