STS11N3LLH5

STMICROELECTRONICS  STS11N3LLH5  晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0117 ohm, 10 V, 1 V

The is a N-channel Power MOSFET developed using STMicroelectronics STripFET™V technology. The device has been optimized to achieve very low ON-state resistance, contributing to a FOM that is among the best in its class.

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RDS ON x Qg industry benchmark

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Extremely low ON-resistance RDS ON

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Very low switching gate charge

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High avalanche ruggedness

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Low gate drive power losses

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-55 to 150°C Operating junction temperature range