SISA18ADN-T1-GE3

VISHAY  SISA18ADN-T1-GE3  晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC power supply, high current power rails in computing, battery protection, telecom POL and brick applications.

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100% Rg tested

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range