FDMS8888

N沟道MOSFET PowerTrench® N-Channel PowerTrench® MOSFET

General Description

The   has been designed to minimize losses in conversion application. Advancements in both silicon rDSon while maintaining excellent switching performance. power and package technologies have been combined to offer the lowest

Features

Max rDSon= 9.5 m:at VGS= 10 V,ID= 13.5 A

Max rDSon= 14.5 m:at VGS= 4.5 V, ID= 10.9 A

Advanced Package and Silicon combination for low rDSon and high efficiency

MSL1 robust package design

RoHS Compliant