MRF8S9170NR3
Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960MHz, 50W Avg., 28V
Overview
The is designed for base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
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## Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13-inch Reel.
## Features RF Performance Table
### 900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- *
\---|---|---|---|---
920 MHz| 19.3| 36.5| 6.0| –36.6
940 MHz| 19.1| 36.1| 6.1| –36.7
960 MHz| 18.9| 36.0| 6.0| –36.1
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power 3 dB Input Overdrive from Rated Pout, Designed for Enhanced Ruggedness
* Typical Pout @ 1 dB Compression Point ≃ 177 Watts CW
