MRF8S9170NR3

Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960MHz, 50W Avg., 28V

Overview

The is designed for base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13-inch Reel.

## Features RF Performance Table

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

920 MHz| 19.3| 36.5| 6.0| –36.6

940 MHz| 19.1| 36.1| 6.1| –36.7

960 MHz| 18.9| 36.0| 6.0| –36.1

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power 3 dB Input Overdrive from Rated Pout, Designed for Enhanced Ruggedness

* Typical Pout @ 1 dB Compression Point ≃ 177 Watts CW