IRLS640A

先进的功率MOSFET Advanced Power MOSFET

Advanced Power MOSFET

FEATURES

♦Logic-Level Gate Drive

♦Avalanche Rugged Technology

♦Rugged Gate Oxide Technology

♦Lower Input Capacitance

♦Improved Gate Charge

♦Extended Safe Operating Area

♦Lower Leakage Current: 10µA Max. @ VDS= 100V

♦Lower RDSON: 0.336ΩTyp.

贸泽:
MOSFET 200V N-Channel a-FET Logic Level

艾睿:
Trans MOSFET N-CH 200V 9.8A 3-Pin3+Tab TO-220F Tube

安富利:
Trans MOSFET N-CH 200V 9.8A 3-Pin3+Tab TO-220F Rail

Verical:
Trans MOSFET N-CH 200V 9.8A 3-Pin3+Tab TO-220F Tube

Win Source:
MOSFET N-CH 200V 9.8A TO-220F