SGW30N60FKSA1

INFINEON  SGW30N60FKSA1  单晶体管, IGBT, 41 A, 2.4 V, 250 W, 600 V, TO-247AC, 3 引脚

分离式 IGBT

Infineon 分离式 IGBT 晶体管提供各种技术，如 NPT、Trenchstop™ 和 Fieldstop。它们可用于需要硬切换或软切换的许多应用，包括工业驱动器、UPS、变频器、家用电器和感应炉灶。一些器件包括反并联二极管或单片集成二极管。

得捷:
IGBT NPT 600V 41A TO247-3

欧时:
Infineon SGW30N60FKSA1 N沟道 IGBT, 41 A, Vce=600 V, 3引脚 TO-247封装

贸泽:
IGBT Transistors IGBT PRODUCTS

e络盟:
单晶体管, IGBT, 41 A, 2.4 V, 250 W, 600 V, TO-247AC, 3 引脚

艾睿:
The SGW30N60FKSA1 IGBT transistor from Infineon Technologies is the best electronic switch for fast switching. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

Chip1Stop:
Trans IGBT Chip N-CH 600V 41A 250000mW 3-Pin3+Tab TO-247 Tube

Verical:
Trans IGBT Chip N-CH 600V 41A 250000mW 3-Pin3+Tab TO-247 Tube

Win Source:
IGBT 600V 41A 250W TO247-3