FDG6317NZ

FAIRCHILD SEMICONDUCTOR  FDG6317NZ  双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V

The is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS ON and gate charge QG in a small package.

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Low gate charge

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Gate-source Zener for ESD ruggedness 1.6kV human body model

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High performance Trench technology for extremely low RDS ON

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Compact industry standard surface-mount package