BUL45D2G

ON SEMICONDUCTOR  BUL45D2G  射频双极性晶体管

Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 12 V. Its maximum power dissipation is 75000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 12 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.