STP85N3LH5

STMICROELECTRONICS  STP85N3LH5  晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V

The is a N-channel Power MOSFET utilizes the 5th generation of design rules of proprietary STripFET™ technology. The lowest available RDS ON

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Qg, in the standard packages, makes this device suitable for the most demanding DC-to-DC converter applications, where high power density is to be achieved.

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RDS ON x Qg industry benchmark

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Extremely low ON-resistance RDS ON

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High avalanche ruggedness

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Low gate drive power losses