IXXH30N60B3D1

Trans IGBT Chip N-CH 600V 60A 270000mW Automotive 3Pin3+Tab TO-247AD

IGBT PT 600 V 60 A 270 W 通孔 TO-247（IXXH）

得捷:
IGBT 600V 60A 270W TO247

立创商城:
IXXH30N60B3D1

艾睿:
The IXXH30N60B3D1 IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 270000 mW. It has a maximum collector emitter voltage of 600 V. This device utilizes xpt technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

TME:
Transistor: IGBT; 600V; 30A; 270W; TO247AD

Verical:
Trans IGBT Chip N-CH 600V 60A 270000mW 3-Pin3+Tab TO-247AD