830mW，BZT52H 系列，NXP Semiconductors通用齐纳二极管高达 830mW 齐纳电压范围内的严格容差 表面安装外壳，SOD-123F ### 齐纳二极管，NXP Semiconductors
Total power dissipation: ≤ 830 mW Small plastic package suitable for surface mounted design Single Zener diodes Low differential resistance
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | BZT52H-C5V6 | NXP 恩智浦 | |
 | BZT52H-C3V3,115 | NXP 恩智浦 | |
 | BZT52H-B36,115 | NXP 恩智浦 | |
 | BZT55C3V3-GS08 | Vishay Semiconductor 威世 | |
 | BZT55C4V7-GS08 | Vishay Semiconductor 威世 | |
 | BZT55C2V7-GS08 | Vishay Semiconductor 威世 | |
 | BZT55C3V6-GS08 | Vishay Semiconductor 威世 | |
 | BZT52C11 | Diotec Semiconductor | |
 | BZT55C4V3-GS08 | Vishay Semiconductor 威世 | |
 | BZT55C16-GS08 | Vishay Semiconductor 威世 | |
 | BZT55C9V1-GS08 | Vishay Semiconductor 威世 |
