BSC010NE2LSATMA1
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
OptiMOS™ 功率 MOSFET 系列
OptiMOS™ 产品提供高性能封装,可处理最具挑战性的应用,在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。
N 通道 - 增强模式
符合汽车 AEC Q101 规格
MSL1 高达 260°C 峰值回流焊接
175°C 工作温度
绿色封装(无铅)
超低 Rdson
欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET BSC010NE2LSATMA1, 100 A, Vds=25 V, 8引脚 TDSON封装
得捷:
MOSFET N-CH 25V 39A/100A TDSON
立创商城:
N沟道 25V 100A 39A
e络盟:
INFINEON BSC010NE2LSATMA1 晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0008 ohm, 10 V, 2 V
艾睿:
Make an effective common source amplifier using this BSC010NE2LSATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 96000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
安富利:
Trans MOSFET N-CH 25V 39A 8-Pin TDSON T/R
Chip1Stop:
Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R