TPC8212

TPC8212 双N沟道场效应管 30V 6A SM8 代码 TPC8212 DC/DC转换器 低漏电流

最大源漏极电压VdsDrain-Source Voltage | 30V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage | ±20V 最大漏极电流IdDrain Current | 6A 源漏极导通电阻RdsDrain-Source On-State Resistance | 16mΩ~21mΩ VGS = 10 V , ID = 3 A 开启电压Vgs（th）Gate-Source Threshold Voltage | 1.1V~2.3V VDS = 10 V, ID = 1 mA 耗散功率PdPower Dissipation | 0.75W Description & Applications | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 5.5 nC typ. • Low drain-source ON-resistance: RDS ON = 16 mΩ typ. • High forward transfer admittance: |Yfs| =14 S typ. • Low leakage current: IDSS = 10 µA max VDS = 30 V • Enhancement mode: Vth = 1.1 to 2.3 V VDS = 10 V, ID = 1 mA 描述与应用 | 　　高效直流/直流转换器的应用程序 　　笔记本电脑的应用 　　便携设备应用程序 　　 　　硅n沟道MOS场效应晶体管超高速U-MOSIII类型 　　由于小和薄包占用空间小 　　高速开关 　　小闸极电荷:QSW = 5.5数控typ。 　　低漏源极导通电阻:RDS= 16 m?typ。 　　高向前转移导纳:| yf | = 14年代typ。 　　低漏电流:ids = 10μAmaxVDS = 30 V