BD136G

ON SEMICONDUCTOR  BD136G  单晶体管 双极, PNP, -45 V, 1.25 W, -1.5 A, 25 hFE 新

Implement this versatile PNP GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.