2SJ130L-E

硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET

Features

•  Low on-resistance

•  High speed switching

•  Low drive current

•  No secondary breakdown

•  Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators

Application

High speed power switching

Chip1Stop:
Trans MOSFET P-CH 300V 1A 3-Pin3+Tab DPAKL-1

罗切斯特:
Trans MOSFET P-CH 300V 1A 3-Pin3+Tab DPAKL-1