IKW25T120
INFINEON IKW25T120 单晶体管, IGBT, 通用, 50 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 引脚
Summary of Features:
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- Lowest V cesat drop for lower conduction losses
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- Low switching losses
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- Easy parallel switching capability due to positive temperature coefficient in V cesat
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- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
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- High ruggedness, temperature stable behavior
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- Low EMI emissions
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- Low gate charge
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- Very tight parameter distribution
Benefits:
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- Highest efficiency – low conduction and switching losses
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- Comprehensive portfolio in 600V and 1200V for flexibility of design
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- High device reliability