K9F4G08U0A-P
FLASH MEMORY
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9F4G08U0A is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the 2K+64Byte page and an erase operation can be performed in typical 1.5ms on a 128K+4KByte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0A′s extended reliability of 100K program/erase cycles by providing ECCError Correcting Code with real time mapping-out algorithm. The K9F4G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
• Voltage Supply
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : 512M + 16M x 8bit
- Data Register : 2K + 64 x 8bit
• Automatic Program and Erase
- Page Program : 2K + 64Byte
- Block Erase : 128K + 4KByte
• Page Read Operation
- Page Size : 2K + 64Byte
- Random Read : 25µsMax.
- Serial Access : 25nsMin.
• Fast Write Cycle Time
- Page Program time : 200µsTyp.
- Block Erase Time : 1.5msTyp.
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
-Endurance : 100K Program/Erase Cycleswith 1bit/512Byte ECC
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- CB0/PIB0
48 - Pin TSOP I 12 x 20 / 0.5 mm pitch
- K9F4G08U0A-ICB0/IIB0
52 - Pin ULGA 12 x 17 / 1.00 mm pitch
- K9K8G08U1A-ICB0/IIB0
52 - Pin ULGA 12 x 17 / 1.00 mm pitch
