IRFBE30SPBF

功率MOSFET Power MOSFET

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead Pb-free Available

艾睿:
Trans MOSFET N-CH 800V 4.1A 3-Pin2+Tab D2PAK

富昌:
单 N 沟道 800 V 3 Ohms 表面贴装 功率 Mosfet - D2PAK-3

Chip1Stop:
Trans MOSFET N-CH 800V 4.1A 3-Pin2+Tab D2PAK

Verical:
Trans MOSFET N-CH 800V 4.1A 3-Pin2+Tab D2PAK

Newark:
# VISHAY  IRFBE30SPBF  Power MOSFET, N Channel, 4.1 A, 800 V, 3 ohm, 10 V, 4 V