IXFB100N50P

IXFB 系列 N 沟道 500 Vds 49 mOhm 24 nC 1250 W Mosfet - PLUS264

N-Channel 500V 100A Tc 1890W Tc Through Hole PLUS264™

得捷:
MOSFET N-CH 500V 100A PLUS264

艾睿:
This IXFB100N50P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1890000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 500V; 100A; 1890W; PLUS264; 200ns

Verical:
Trans MOSFET N-CH 500V 100A 3-Pin3+Tab ISOPLUS 264

DeviceMart:
MOSFET N-CH 500V 100A PLUS264