PTVA104501EHV1R0XTMA1

射频金属氧化物半导体场效应RF MOSFET晶体管

Summary of Features:

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Broadband input and output matching

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High gain and efficiency

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Integrated ESD protection

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Low thermal resistance

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Pb-free and RoHS compliant

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Capable of withstanding a 10:1 load mismatch all phase angles at 450 W peak under RF pulse, 128 μS, 10% duty cycle

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Package: H-33288-2, bolt-down