PTVA120501EAV1XWSA1
射频金属氧化物半导体场效应RF MOSFET晶体管 RFP-LDH1V
Summary of Features:
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- Broadband input matching
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- High gain and efficiency
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- Integrated ESD protection
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- Low thermal resistance
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- Pb-free and RoHS compliant
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- Capable of withstanding a 10:1 load mismatch all phase angles at 50 W peak under RF pulse, 300 μS, 10% duty cycle.
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- Package: H-36265-2, bolt down