IRFZ24NLPBF

Trans MOSFET N-CH Si 55V 17A 3Pin3+Tab TO-262

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

• Advanced Process Technology

• Surface Mount IRFZ24NS

• Low-profile through-hole IRFZ24NL

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Lead-Free