MMBT123S-7-F

MMBT123S 系列 18 V 1 A 300 mW NPN 表面贴装 晶体管 - SOT-23-3

Use this versatile NPN GP BJT from Zetex to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 18 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.