2N3637

PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR

Trans GP BJT PNP 175V 1A 3-Pin TO-39

艾睿:
The three terminals of this PNP 2N3637 GP BJT from Microsemi give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 175 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

Chip1Stop:
Trans GP BJT PNP 175V 1A 3-Pin TO-39

Verical:
Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39 Bag

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Trans GP BJT PNP 175V 1A 3-Pin TO-39