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2N3637UB

PNP硅晶体管开关 PNP SILICON SWITCHING TRANSISTOR

has the solution to your circuit"s high-voltage requirements with their PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

2N3637UB PDF数据文档
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