FDMA291P

FAIRCHILD SEMICONDUCTOR  FDMA291P  晶体管, MOSFET, P沟道, 6.6 A, -20 V, 0.036 ohm, -700 mV, -700 mV

The is a 1.8V specified single P-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low ON-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

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Halogen-free