IRF3205ZPBF

55V,75A,6.5mΩ,N沟道功率MOSFET

Power MOSFET, Pulsed Drain Current 440 A, Input Capacitance 3450 pF

* Advanced process technology

* Ultra low on-resistance

* 150 °C operating temperature

* Fast switching

* Repetitive avalanche allowed up to Tjmax

* Lead-free

Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature