FQP3N50C

500V N沟道MOSFET 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Product Highlights

3 A, 500 V, R

DSon

= 2.5

W

@ V

GS

= 10 V

Low gate charge typical 10 nC

Low Crss typical 8.5 pF

Fast switching

100 % avalanche tested

Improved dv/dt capability