SI1012CR-T1-GE3

VISHAY  SI1012CR-T1-GE3  晶体管, MOSFET, N沟道, 630 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV

The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.

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1.2V Rated voltage

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100% Rg tested

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1000V Gate-source ESD protected

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Halogen-free