PTFB182503FLV2R0XTMA1

Trans RF MOSFET N-CH 65V 5Pin Case 34288-4/2 T/R

Summary of Features:

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Broadband internal input and output matching

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Enhanced for use in DPD error correction systems

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Typical two-carrier WCDMA performance, 1880 MHz, 30 V

\- Average output power = 50 W

\- Linear gain = 19 dB

\- Drain efficiency = 28 %

\- Intermodulation distortion = –35 dBc

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Typical CW performance, 1880 MHz, 30 V

\- Output power at P1dB = 240 W

\- Efficiency = 55%

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Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers

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Integrated ESD protection. Human Body Model, Class 2 minimum

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Capable of handling 10:1 VSWR @ 30 V, 240 W CW output power

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Pb-free, RoHS compliant

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Package: H-34288-4/2, earless