F3L100R12W2H3B11BPSA1
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.55 V, 375 W, 1.2 kV, Module
Summary of Features:
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- Low inductive design
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- Low Switching Losses
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- Low V CEsat
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- Al 2O 3 Substrate with Low Thermal Resistance
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- Compact design
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- PressFIT Contact Technology
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- Rugged mounting due to integrated mounting clamps
Benefits:
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- Compact module concept
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- Optimized customer’s development cycle time and cost
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- Configuration flexibility