LM5101BMA

TEXAS INSTRUMENTS  LM5101BMA  双路驱动器, MOSFET, 高压侧和低压侧, 9V-14V电源, 2A输出, 22ns延迟, SOIC-8

The is a 2A high voltage high-side and low-side Gate Driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The "B" versions provide a full 2A of gate drive. The outputs are independently controlled with CMOS input thresholds or TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails.

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Drives both a high-side and low-side N-channel MOSFETs

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Independent high and low driver logic inputs

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Up to 118VDC bootstrap supply voltage

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Drives 1000pF load with 8ns rise and fall times

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Excellent propagation delay matching

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Supply rail under-voltage lockout

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Low power consumption

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.