IGA03N120H2XKSA1
INFINEON IGA03N120H2XKSA1 单晶体管, IGBT, 3 A, 2.8 V, 29 W, 1.2 kV, TO-220, 3 引脚
The IGA03N120H2 is a huge IGBT portfolio addressing soft switching/resonant and hard switching topologies. The 2nd generation high speed-technology for 1200V applications offers loss reduction in resonant circuits, temperature stable behaviour, parallel switching capability, tight parameter distribution and simple gate-control.
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- Loss reduction in resonant circuit
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- Temperature stable behaviour
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- Parallel switching capability
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- Tight parameter distribution
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- EOFF optimized for IC = 1A
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- ±20V Gate-emitter voltage
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- 29W Power dissipation at 25°C
